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2SC4050 Datasheet

  • 2SC4050

  • Silicon NPN Epitaxial

  • hitachi

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2SC4050
Absolute Maximum Ratings
(Ta = 25擄C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
120
120
5
100
150
150
鈥?5 to +150
Unit
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
(Ta = 25擄C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
V
BE(sat)
Min
120
120
5
鈥?/div>
鈥?/div>
250
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
0.1
0.1
800
0.1
1.1
V
V
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
Test conditions
I
C
= 10
碌A(chǔ),
I
E
= 0
I
C
= 1 mA, R
BE
=
鈭?/div>
I
E
= 10
碌A(chǔ),
I
C
= 0
V
CB
= 70 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
V
CE
= 12 V, I
C
= 2 mA*
2
I
C
= 10 mA, I
B
= 1 mA*
2
I
C
= 10 mA, I
B
= 1 mA*
2
Notes: 1. The 2SC4050 is grouped by h
FE
as follows.
2. Pluse test
Grade
Mark
h
FE
D
KID
250 to 500
E
KIE
400 to 800
2

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