2N6304
ELECTRICAL SPECIFICATIONS (Tcase = 25
擄
C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
Test Conditions
Min.
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC= 100
碌A(chǔ)dc,
IE=0)
Emitter-Base Breakdown Voltage
(IE = 100
碌A(chǔ)dc,
IC = 0)
Collector Cutoff Current
(VCB = 5.0 Vdc, IE = 0 Vdc)
15
30
3.5
-
Value
Typ.
-
-
-
-
Max.
-
-
-
10
Unit
Vdc
Vdc
Vdc
nAdc
(on)
HFE
DC Current Gain
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
25
-
250
-
DYNAMIC
Symbol
f
T
NF
Test Conditions
Min.
Current-Gain - Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Noise Figure (50 Ohms)
(IC = 2 mAdc, VCE = 5.0 Vdc, f = 450 MHz)
Collector-Base Capacitance
(VCB = 10Vdc, IE = 0, f = 1 MHz)
-
1.4
Value
Typ.
-
5.0
0.8
1.0
Max.
-
Unit
GHz
dB
pF
CCB
MSC1323.PDF 10-25-99