2SD1760 / 2SD1864
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
BASE SATURATION VOLTAGE
: V
BE (sat)
(V)
5
2
1
0.5
0.2
0.1
0.05
0.02
V
CE (sat)
1
2
5
10
Ta = 100擄C
-25擄C
25擄C
Ta = -25擄C
V
BE (sat)
25擄C
100擄C
TRANSITION FREQUENCY : f
T
(MHz)
l
C
/l
B
= 10
500
200
100
50
20
10
5
2
1
1
2
5
10 20
Ta = 25
擄C
V
CE
= 5V
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
10
1000
1000
500
200
100
50
20
10
5
2
1
0.1 0.2
0.5
1
2
5
Ta = 25
擄C
f = 1MHz
I
E
= 0A
0.01
0.01 0.02 0.05 0.1 0.2 0.5
50 100 200
5001000
10 20
50 100
COLLECTOR CURRENT : I
C
(A)
EMITTER CURRENT :
鈭捍
E
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.7 Collector-emitter saturation
voltage vs. collector current
Base-emitter saturation voltage
vs. collector current
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance
vs. collector-base voltage
TRANSIENT THERMAL RESISTANCE : R
th
(擄C/W)
5
P
W
COLLECTOR CURRENT : I
C
(A)
5
COLLECTOR CURRENT : I
C
(A)
2
P
W
V
CE
=5v
I
C
=0.2A
100
Pw
=1
Pw
2
1
DC
00
=1
c
Se
0m
Sec
m
=1
0m
1
0.5
DC
0.2
0.1
0.05
0.02 Ta = 25擄C
Single pulse
0.01
*
0.1 0.2 0.5 1
=1
00
s*
*
ms
0.5
0.2
0.1
0.05 Ta=25擄C
Single
nonrepetitive
0.02 pulse
0.2 0.5 1
10
1
2
5
10 20
50 100
0.1
1
10
100
1Sec 10Sec 100Sec
2
5
10 20
50 100
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
TIME : T
(ms)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.10 Safe operating area
(2SD1760)
Fig.11 Transient thermal resistance
(2SD1760)
Fig.12 Safe operating area
(2SD1864)
TRANSIENT THERMAL RESISTANCE : R
t h
(擄C/W)
100
10
1
0.1
1
10
100
1
10Sec 100Sec1000Sec
TIME : T
(ms)
Fig.13 Transient thermal resistance
(2SD1864)
1
2
3
