最新免费av在线观看,亚洲综合一区成人在线,中文字幕精品无码一区二区三区,中文人妻av高清一区二区,中文字幕乱偷无码av先锋

PZT2222AT1/D Datasheet

  • PZT2222AT1/D

  • NPN SILICON TRANSISTOR SURFACE MOUNT

  • 139.75KB

  • 6頁

  • ONSEMI

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PZT2222AT1/D
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in linear and switching
applications. The device is housed in the SOT-223 package which is designed for
medium power surface mount applications.
鈥?/div>
PNP Complement is PZT2907AT1
鈥?/div>
The SOT-223 package can be soldered using wave or reflow.
鈥?/div>
SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility of
damage to the die.
鈥?/div>
Available in 12 mm tape and reel
Use PZT2222AT1 to order the 7 inch/1000 unit reel.
Use PZT2222AT3 to order the 13 inch/4000 unit reel.
BASE
1
3
EMITTER
COLLECTOR
2, 4
PZT2222AT1
Motorola Preferred Device
SOT-223 PACKAGE
NPN SILICON
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (Open Collector)
Collector Current
Total Power Dissipation up to TA = 25擄C(1)
Storage Temperature Range擄
Junction Temperature擄
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
40
75
6.0
600
1.5
鈥?65 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
擄C
擄C
THERMAL CHARACTERISTICS
Thermal Resistance from Junction to Ambient
Lead Temperature for Soldering, 0.0625鈥?from case
Time in Solder Bath
R
胃JA
TL
83.3
260
10
擄C/W
擄C
Sec
DEVICE MARKING
P1F
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector-Base Breakdown Voltage (IC = 10
碌A(chǔ)dc,
IE = 0)
Emitter-Base Breakdown Voltage (IE = 10
碌A(chǔ)dc,
IC = 0)
Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = 鈥?3.0 Vdc)
Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = 鈥?3.0 Vdc)
Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEX
ICEX
IEBO
40
擄75擄
6.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
擄鈥斅?/div>
鈥?/div>
20
10
100
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
REV 2
漏
Motorola, Inc. 1996
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
1

PZT2222AT1/D相關(guān)型號PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！