INFRARED DETECTOR
InAs photovoltaic detector
P10090 series
Low noise, high reliability infrared detectors (for 3 碌m band)
InAs photovoltaic detectors have high sensitivity in the infrared region around 3 碌m as with PbS photoconductive detectors, and also
feature low noise and high reliability. P10090 series is a new family of InAs photovoltaic detectors that deliver even higher sensitivity than
our convensional products (P8079 series).
Features
Applications
l
Low noise
l
High reliability
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High detectivity (D*)
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Available in multi-element arrays (custom product)
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Gas analysis
l
Laser detection
l
Infrared spectrophotometry
l
Radiation thermometer
Accessories (Optional)
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Heatsink for one-stage TE-cooled type
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Heatsink for two-stage TE-cooled type
l
Temperature controller
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Infrared detector module with preamp
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Amplifiers for InAs photovoltaic detector
(custom-made product)
A3179
A3179-01
C1103-04
P4631-01
s
Specifications/Absolute maximum ratings
Dimensional
outline/
Windo w
material *
鉃€/S
鉃?S
P10090-21
* Window material S: sapphire glass
Active
area
(mm)
TO-5
TO-8
Non-cooled
One-stage
TE-cooled
Two-stage
TE-cooled
Thermistor
power
dissipation
(mW)
-
0.2
Absolute maximum ratings
Operating
Reverse
temperature
voltage
Topr
V
R
(V)
(擄C)
Storage
temperature
Tstg
(擄C)
Type No.
Package
Cooling
P10090-01
P10090-11
蠁1
0.5
-40 to +60
-40 to +80
s
Electrical and optical characteristics (Typ. unless otherwise noted)
Measure ment
Peak
Photo
condition
C ut-off
sensitivity
sensitivity Shunt resistance
w a velength
Ele m e nt
wavelength
S
Rsh
te m p erature
位c
位p
位=位p
T
Min.
Typ.
(擄C)
(碌m)
(碌m)
(A/W)
(鈩?
(鈩?
25
3.35
3.65
1.0
40
70
-10
3.30
3.55
250
400
1.2
-30
3.25
3.45
1000
1300
D
鈭?/div>
(位p, 600, 1)
Min.
Typ.
1/2
(cm路 Hz /W) (cm路 Hz
1/2
/W)
3.0 脳 10
9
4.5 脳 10
9
1.0 脳 10
10
1.6 脳 10
10
2.0 脳 10
10
3.2 脳 10
10
NEP
位=位p
Rise time
tr
V
R
=0 V
R
L
=50
鈩?/div>
0 to 63 %
(碌s)
0.70
0.45
0.30
Type No.
P10090-01
P10090-11
P10090-21
(W/Hz
1/2
)
1.5 脳 10
-11
5.3 脳 10
-12
2.8 脳 10
-12
1
1
2
3
4
