TetraFET
D1260UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C
D
(2 pls)
E
B
1
2
3
A
G
5
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
60W 鈥?12.5V 鈥?175MHz
SINGLE ENDED
FEATURES
鈥?SIMPLIFIED AMPLIFIER DESIGN
H
I
F
M
K
J
N
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
鈥?LOW C
rss
鈥?SIMPLE BIAS CIRCUITS
鈥?LOW NOISE
DT
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
SOURCE (COMMON) PIN 4
DRAIN
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
mm
6.35 DIA
3.17 DIA
18.41
5.46
5.21
7.62
21.59
3.94
12.70
0.13
24.76
2.59
4.06
Tol.
0.13
0.13
0.25
0.13
0.13
MAX
0.38
0.13
0.13
0.03
0.13
0.13
0.25
Inches
0.250 DIA
0.125 DIA
0.725
0.215
0.205
0.300
0.850
0.155
0.500
0.005
0.975
0.102
0.160
Tol.
0.005
0.005
0.010
0.005
0.005
MAX
0.015
0.005
0.005
0.001
0.005
0.005
0.010
GATE
SOURCE (COMMON)
鈥?HIGH GAIN 鈥?10 dB MINIMUM
APPLICATIONS
鈥?/div>
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain 鈥?Source Breakdown Voltage
Gate 鈥?Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
175W
40V
鹵20V
40A
鈥?5 to 150擄C
200擄C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
1
2
