BZX85B...
Vishay Telefunken
Silicon Epitaxial Planar Z鈥揇iodes
Features
D
D
D
D
Sharp edge in reverse characteristics
Low reverse current
Low noise
Very high stability
Applications
94 9369
Voltage stabilization
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
l=4mm, T
L
=25
擄
C
Type
Symbol
P
V
T
j
T
stg
Value
1.3
175
鈥?5...+175
Unit
W
擄
C
擄
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4mm, T
L
=constant
Symbol
R
thJA
Value
110
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1
Unit
V
Document Number 85607
Rev. 3, 01-Apr-99
www.vishay.de
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